DocumentCode :
2175632
Title :
Polarization anisotropic characteristics of GaInAsP/InP quantum-wire lasers - threshold current and gain spectrum
Author :
Maruyama, Takeo ; Plumwongrot, Dhanorm ; Yagi, Hideki ; Miura, Koji ; Nishimoto, Yoshifumi ; Arai, Shigchisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
582
Lastpage :
585
Abstract :
Polarization dependent anisotropic lasing characteristics, which are attributed to the anisotropic dipole moment in quantum-wires, wire clearly observed two types of GaInAsP/InP strain-compensated multiple-quantum-wire lasers, where quantum-wires are laid on in parallel and perpendicular to the light propagating direction
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wires; GaInAsP-InP; GalnAsP-InP quantum-wire lasers; anisotropic dipole moment; gain spectrum; light propagation; polarization anisotropic lasing characteristics; threshold current; Anisotropic magnetoresistance; Geometrical optics; Indium phosphide; Laser theory; Optical resonators; Polarization; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517564
Filename :
1517564
Link To Document :
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