Electro-optic sampling using wide-band high-efficiency ion-irradiated photoconductor as optical-to-electrical converter

Author

Mangeney, J. ; Joulaud, L. ; Chimot, N. ; Crozat, P. ; Boukari, C. ; Riet, M. ; Lefevre, R.

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. of Paris-sud, Orsay

fYear

2005

fDate

8-12 May 2005

Firstpage

586

Lastpage

589

Abstract

We propose a new version of electro-optic sampler at 1.5 mum, which uses an ion-irradiated InP-based photoconductor for the optical-to-electrical conversion. A measurement bandwidth larger than 300 GHz is obtained for a signal-to-noise ratio higher than 15 dB and excitation pulses of peak amplitude as high as 0.81 V. The performances of our system are validated from test measurements performed on coplanar waveguide transmission lines made on semi-insulating InP substrates

Keywords

III-V semiconductors; coplanar transmission lines; coplanar waveguide components; electro-optical devices; indium compounds; photoconducting devices; 1.5 micron; InP; coplanar waveguide transmission lines; electro-optic sampling; ion-irradiated InP-based photoconductor; optical-to-electrical converter; semiinsulating InP substrates; signal-to-noise ratio; wide-band high-efficiency ion-irradiated photoconductor; Bandwidth; Optical pulses; Optical waveguides; Performance evaluation; Photoconductivity; Pulse measurements; Sampling methods; Signal to noise ratio; Transmission line measurements; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517565

Filename

1517565