Title :
Application of new theory of thermoelectric effects on CdTe
Author :
Vackova, S. ; Zdansky, K. ; Chren, D. ; Horazdovsky, T. ; Gorodinskij, V. ; Majlingova, O. ; Vacek, K.
Author_Institution :
Dept. of Phys., Czech Tech. Univ., Prague, Czech Republic
Abstract :
The fast rise of Seebeck coefficient in CdTe with decreasing temperature found experimentally, has not been successfully explained theoretically for many years. It is shown that this effect can be realistically explained by a new theory (Yu. Gurevich et al, Phys. Rev., in press) which includes processes on the metal semiconductor interface. Also the influence of temperature gradient on the sensitivity of gamma detectors in CdTe is discussed
Keywords :
II-VI semiconductors; Seebeck effect; cadmium compounds; gamma-ray detection; semiconductor counters; semiconductor-metal boundaries; CdTe; Seebeck coefficient; gamma detectors; metal semiconductor interface; sensitivity; temperature gradient; thermoelectric effects; Charge carrier processes; Copper; Electric resistance; Electrons; Ohmic contacts; Radiative recombination; Spontaneous emission; Temperature measurement; Temperature sensors; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979910
