DocumentCode
2175713
Title
Metalorganic vapor-phase epitaxy of antimonide for application to 1.55 /spl mu/m VCSELs on InP substrates
Author
Ostinelli, O. ; Gini, E. ; Ebnöther, M. ; Almuneau, G. ; Haiml, M. ; Grange, R. ; Keller, U. ; Bächtold, W.
Author_Institution
Dept. for Inf. Technol. & Electr. Eng., Swiss Fed. Inst. of Technol., Zurich
fYear
2005
fDate
8-12 May 2005
Firstpage
594
Lastpage
597
Abstract
A distributed Bragg reflector at 1.55 mum grown monolithically by metalorganic vapor-phase epitaxy is reported. The DBR composed of 24 AlGaAsSb/InP periods achieves a reflectivity of 99.5% over the 2 inch wafer surface
Keywords
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflectors; gallium arsenide; reflectivity; surface emitting lasers; 1.55 micron; AlGaAsSb-InP; InP; InP substrates; VCSELs; antimonide; distributed Bragg reflector; metalorganic vapor-phase epitaxy; reflectivity; wafer surface; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Indium phosphide; Mirrors; Molecular beam epitaxial growth; Reflectivity; Refractive index; Substrates; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517567
Filename
1517567
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