Title :
Metalorganic vapor-phase epitaxy of antimonide for application to 1.55 /spl mu/m VCSELs on InP substrates
Author :
Ostinelli, O. ; Gini, E. ; Ebnöther, M. ; Almuneau, G. ; Haiml, M. ; Grange, R. ; Keller, U. ; Bächtold, W.
Author_Institution :
Dept. for Inf. Technol. & Electr. Eng., Swiss Fed. Inst. of Technol., Zurich
Abstract :
A distributed Bragg reflector at 1.55 mum grown monolithically by metalorganic vapor-phase epitaxy is reported. The DBR composed of 24 AlGaAsSb/InP periods achieves a reflectivity of 99.5% over the 2 inch wafer surface
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflectors; gallium arsenide; reflectivity; surface emitting lasers; 1.55 micron; AlGaAsSb-InP; InP; InP substrates; VCSELs; antimonide; distributed Bragg reflector; metalorganic vapor-phase epitaxy; reflectivity; wafer surface; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Indium phosphide; Mirrors; Molecular beam epitaxial growth; Reflectivity; Refractive index; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517567
