Research of temperature and concentration dependences of bismuth transport coefficients on the McClure dispersion law model basis for L-band charge carriers

Author

Grabov, V.M. ; Kulikov, V.A. ; Sidorov, A.V.

fYear

2001

fDate

2001

Firstpage

378

Lastpage

381

Abstract

Experimental data on the Seebeck coefficient and electrical resistivity for bismuth crystals was summarized and supplied in this research. General laws of transport processes based on the McClure charge carrier dispersion law are considered. The relaxation time of charge carriers is approximated by a power function of the temperature and energy. Three actual bands are taken for calculation of the transport coefficient in these materials. Electrical resistivity and the Seebeck coefficient were found by numerical solution of the transport equation. Various parameters of the relaxation law are selected by the least square method for minimization of the difference between experimental and calculated results

Keywords

Seebeck effect; bismuth; carrier relaxation time; electrical resistivity; elemental semiconductors; least squares approximations; Bi; L-band charge carriers; McClure charge carrier dispersion law; McClure dispersion law model; Seebeck coefficient; bismuth crystals; bismuth transport coefficients; concentration dependence; electrical resistivity; least square method; power function; relaxation law; relaxation time; temperature dependence; transport coefficient; transport equation; transport process; Bismuth; Charge carriers; Crystalline materials; Crystals; Electric resistance; Equations; Least squares approximation; Magnetic field measurement; Temperature dependence; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979911

Filename

979911