“VLSI beyond CMOS devices: Nano, single electron and spintronic devices”

• Due to the size limitation even with scaling down of the MOSFET technology cannot continue forever.. It will hardly go beyond a few nm, even if adequate lithographical technology will be available. As a consequence, the search for the new principles of operation of the small-size devices is becoming more and more important. • They possess radically different properties from those of bulk semiconductors. • This change in the effective dimensionality offers fascinating changes in electric, magnetic, optical and vibrational properties. • The electron mobility is high in those devices • Researches on the (nanodevices) quantum devices continue to be both challenging and exciting as novel structures with different material having different properties are developed. • They are useful for millimeter and sub millimeter wave applications • They have potential advantages that make them attractive for nonlinear functions • It is possible to realize high-frequency, low-power consuming and low-dimensional devices. • Application of soft computing tool can help in the optimization of system parameter of the quantum (nanodevice) devices to get devices of desired characteristics. • On -line optimization during fabrication But quantum devices have inherent limitations • material and process related limitation. • power limitation • wiring limitation • quantum mechanical limitation and • system architecture limitation • The most likely candidate for future ultra - dense digital circuits. • A single electron is sufficient to store information. • The power consumption is drastically reduced. • Ultimate form of the electron device. • The speed power product is predicted to lie close to the quantum limit. • The processing speed of such device will be nearly equal to electronic speed. • The exquisite sensitivity is - bout five orders of magnitude higher. • The integration density is higher than that present in VLSI / ULSI level.