DocumentCode
2175816
Title
Enhancement of phonon-drag thermopower at relatively high temperatures
Author
Ivanov, Yu.V. ; Vedernikov, M.V. ; Zaitsev, V.K. ; Fedorov, M.I.
Author_Institution
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear
2001
fDate
2001
Firstpage
387
Lastpage
390
Abstract
Two mechanisms of electron-phonon drag in nondegenerate semiconductors are considered. In a superlattice, the quasimomentum conservation law is violated because of the confinement of charge carriers in quantum wells. Therefore electrons interact with thermal phonons and the phonon-drag thermopower of a superlattice can be a few orders of magnitude greater than the corresponding thermopower of a bulk semiconductor. The second mechanism under consideration is the optical-phonon drag in polar semiconductors. The obtained results are valid for any temperature. It is shown that the contribution of optical-phonon drag to the Seebeck coefficient can be large even at a temperature exceeding the Debye one
Keywords
Debye temperature; Seebeck effect; interface phonons; interface states; phonon drag; polar semiconductors; semiconductor quantum wells; semiconductor superlattices; Debye temperatures; Seebeck coefficient; charge carriers; confinement; electron-phonon drag; high temperatures; nondegenerate semiconductors; optical-phonon drag; phonon-drag thermopower; polar semiconductors; quantum wells; quasi-momentum conservation law; superlattice; thermal phonons; Charge carrier processes; Charge carriers; Distribution functions; Electrons; Optical scattering; Optical superlattices; Phonons; Semiconductor superlattices; Temperature distribution; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location
Beijing
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979913
Filename
979913
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