DocumentCode :
2175869
Title :
A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain
Author :
Grundbacher, R. ; Raja, R. ; Lai, R. ; Chou, Y.C. ; Nishimoto, M. ; Gaier, T. ; Dawson, D. ; Liu, P.W. ; Barsky, M. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redono Beach, CA
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
613
Lastpage :
616
Abstract :
We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technology with 50 mum substrate
Keywords :
III-V semiconductors; MMIC; high electron mobility transistors; indium compounds; microstrip circuits; 12 dB; 150 to 215 GHz; InP; T-gate InP HEMT MMIC technology; low noise amplifier; single-ended microstrip design; Fabrication; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Microstrip; Molecular beam epitaxial growth; Space technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517571
Filename :
1517571
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2175869
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