A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications

Author

Binkley, David M. ; Rochelle, James M. ; Swann, Brian K.

Author_Institution

Concorde Microsyst. Inc., Knoxville, TN, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

415

Lastpage

418

Abstract

A micropower CMOS, direct-conversion VLF receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, PLL-synthesized receiver covers a frequency range of 10-100 kHz and provides both analog and digital 9-bit I and Q baseband outputs. Lateral bipolar transistors are utilized for low flicker noise and low DC offsets, and special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 μV noise floor, 300 Hz BW). The 100% duty-cycle receiver, intended for long-battery life wireless applications, operates at 360 μW from a 6-V battery

Keywords

CMOS integrated circuits; magnetic sensors; radio receivers; 10 to 100 kHz; 360 muW; 6 V; 9 bit; DC offset; I baseband; PLL synthesis; Q baseband; RF signal; flicker noise; isolation; lateral bipolar transistor; local oscillator signal; magnetic-field wireless; micropower CMOS direct-conversion VLF receiver chip; resonant sensor; 1f noise; Baseband; Batteries; Bipolar transistors; Local oscillators; Magnetic resonance; Magnetic sensors; RF signals; Radio frequency; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606657

Filename

606657