• DocumentCode
    2175913
  • Title

    Instabilities in quantum dot semiconductor lasers at 1.3 μm

  • Author

    Huyet, Guillaume ; Goulding, David ; Melnik, Sergey ; Rasskazov, Oleg ; Hegarty, Stephen Paul ; Rachinskii, Dmitrii

  • Author_Institution
    Nat. Univ. of Ireland, Cork
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    InAs/GaAs quantum dot (QD) semiconductor lasers emitting near 1300 nm present many interesting features for non-linear dynamics as they combine a relatively low line-width enhancement factor with strong damping of the relaxation oscillations. As a result these devices remain stable under large levels of optical feedback but can display instabilities at high temperature where the line-width enhancement factor increases significantly. Here we show that these devices also display very interesting features under the influence of optical injection from a narrow line-width master laser.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser feedback; laser stability; nonlinear optics; quantum dot lasers; spectral line breadth; InAs-GaAs; enhancement factor; nonlinear dynamics; optical feedback; quantum dot semiconductor lasers; relaxation oscillations; wavelength 1300 nm; Damping; Displays; Gallium arsenide; Laser feedback; Nonlinear optics; Optical devices; Optical feedback; Quantum dot lasers; Semiconductor lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0930-3
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4386985
  • Filename
    4386985