DocumentCode
2175978
Title
Partitioned-charge-based modeling: a new approach
Author
McDonald, Robert J.
Author_Institution
Dept. of Electr. & Comput. Eng, Clemson Univ., SC, USA
fYear
1989
fDate
26-28 Mar 1989
Firstpage
452
Lastpage
455
Abstract
By taking moments of the hole (electron) continuity equation, a novel derivation of the partitioned-charge-based (PCB) bipolar junction transistor (BJT) model is presented. The derivation allows for an arbitrary partitioning of the excess charge in the quasi-neutral base (QNB) and thus generalizes the PCB methodology. With this novel approach, an optimal nonquasi-static (NQS) BJT equivalent network representation, within the PCB framework, can be obtained
Keywords
bipolar transistors; semiconductor device models; bipolar junction transistor; equivalent network; hole continuity; partitioned charge based modelling; quasi-neutral base; Charge carrier density; Charge carrier processes; Circuit simulation; Current density; Differential equations; Discrete event simulation; Electrons; Frequency domain analysis; Laplace equations; Modems;
fLanguage
English
Publisher
ieee
Conference_Titel
System Theory, 1989. Proceedings., Twenty-First Southeastern Symposium on
Conference_Location
Tallahassee, FL
ISSN
0094-2898
Print_ISBN
0-8186-1933-3
Type
conf
DOI
10.1109/SSST.1989.72509
Filename
72509
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