Title :
Low noise monolithic 40 GHz mode-locked DBR lasers based on GaInAsP/InP
Author_Institution :
Fraunhofer-Inst. fur Telecommun., Berlin
Abstract :
Very short optical pulses (1.2-2.0 ps) with low amplitude noise (0.8-2.0 %) and low timing jitter (<250 fs) over 5 nm wavelength tuning are reported from a monolithic 40 GHz mode-locked GaInAsP/InP laser
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser mode locking; laser noise; timing jitter; 1.2 to 2.0 ps; 40 GHz; GaInAsP-InP; low amplitude noise; low noise monolithic mode-locked DBR laser; low timing jitter; very short optical pulses; wavelength tuning; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Laser noise; Laser tuning; Noise level; Optical noise; Optical pulses; Optical tuning; Timing jitter;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517576
