DocumentCode
2176043
Title
A miniaturised V-band 4×4 Butler matrix SiGe MMIC
Author
Zhang, Jian ; Fusco, Vincent
Author_Institution
Inst. of Electron., Commun. & Inf. Technol. (ECIT), Queen´´s Univ. of Belfast, Belfast, UK
fYear
2012
fDate
26-30 March 2012
Firstpage
410
Lastpage
413
Abstract
The first reported compact V-band 4×4 Butler matrix using 0.35 μm SiGe bipolar process is described. This design exhibits an average insertion loss of 2 dB with amplitude variation less than 0.5 dB and phase imbalance less than 5 degrees from 55 GHz to 65 GHz. The multi-layer structure of the Si process is utilized to realize the transformer coupler for miniaturizing the circuit. The total chip area is only 0.5×0.9 mm2 including all pads. It offers a simple and low-power application potential in high data-rate.
Keywords
Ge-Si alloys; MMIC; low-power electronics; matrix algebra; millimetre wave couplers; SiGe; bipolar process; frequency 55 GHz to 65 GHz; high data-rate; loss 2 dB; low-power application; miniaturised V-band 4×4 butler matrix MMIC; multilayer structure; size 0.35 mum; transformer coupler; Antenna measurements; Butler matrix; Couplers; Insertion loss; Loss measurement; Silicon germanium; Butler matrix; SiGe; beam-forming; transformer coupler;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation (EUCAP), 2012 6th European Conference on
Conference_Location
Prague
Print_ISBN
978-1-4577-0918-0
Electronic_ISBN
978-1-4577-0919-7
Type
conf
DOI
10.1109/EuCAP.2012.6205907
Filename
6205907
Link To Document