Title :
Synchrotron X-ray topographic characterization of defects in InP bulk crystals
Author :
Dhanaraj, G. ; Raghothamachar, B. ; Bai, J. ; Chung, H. ; Dudley, M.
Author_Institution :
Dept. of Mater. Sci. & Eng., SUNY, Stony Brook, NY
Abstract :
Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities
Keywords :
III-V semiconductors; X-ray topography; dislocation density; indium compounds; necking; slip; twinning; InP; InP bulk crystals; dislocation densities; low temperature gradients; nucleate twinning; post-growth cooling; slip bands; synchrotron X-ray topographic characterization; Chemicals; Crystallization; Crystals; Etching; Indium phosphide; Magnetic liquids; Surfaces; Synchrotrons; Temperature; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517578
