DocumentCode
2176077
Title
Synchrotron X-ray topographic characterization of defects in InP bulk crystals
Author
Dhanaraj, G. ; Raghothamachar, B. ; Bai, J. ; Chung, H. ; Dudley, M.
Author_Institution
Dept. of Mater. Sci. & Eng., SUNY, Stony Brook, NY
fYear
2005
fDate
8-12 May 2005
Firstpage
643
Lastpage
648
Abstract
Synchrotron x-ray topography of InP reveals striations and facets that nucleate twinning under specific conditions, formed during growth, and slip bands during post-growth cooling. Use of necking and low temperature gradients effectively lowers dislocation densities
Keywords
III-V semiconductors; X-ray topography; dislocation density; indium compounds; necking; slip; twinning; InP; InP bulk crystals; dislocation densities; low temperature gradients; nucleate twinning; post-growth cooling; slip bands; synchrotron X-ray topographic characterization; Chemicals; Crystallization; Crystals; Etching; Indium phosphide; Magnetic liquids; Surfaces; Synchrotrons; Temperature; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517578
Filename
1517578
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