Title :
AlGaAs/GaAs HEMT 5-12 GHz integrated system for an optical receiver
Author :
Reina M., R. ; Olmos, Alfredo ; Charry R., E.
Author_Institution :
Lab. de Sistemas Integraveis-LSI/EPUSP, Sao Paulo, Brazil
fDate :
31 May-3 Jun 1998
Abstract :
We report the design of a chip-set containing several key components for an optical receiver in AlGaAs/GaAs HEMT technology. Different building blocks necessary to regenerate the signal coming from an optical data link have been characterized. The system provides a -3 dB bandwidth of 5 GHz with a transimpedance of 2.4 kΩ. Power consumption was estimated to be 350 mW at that frequency. Current ranging from 20 μA to 300 μA may be processed with this receiver. This current range was achieved with an AGC control unit. An appropriate output buffer allows matching to a 50 Ω measurement equipment. The dynamic range is 12.2 dB. Circuit was fabricated at an external foundry
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; automatic gain control; data communication equipment; gallium arsenide; optical receivers; 20 to 300 muA; 350 mW; 5 GHz; 5 to 12 GHz; AGC control unit; AlGaAs-GaAs; AlGaAs/GaAs HEMT technology; chip-set; integrated system; optical data link; optical receiver; Bandwidth; Energy consumption; Frequency estimation; Gallium arsenide; HEMTs; Impedance matching; Optical buffering; Optical design; Optical receivers; Repeaters;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706921
