• DocumentCode
    2176125
  • Title

    Semi-insulating InP wafers obtained by Fe-diffusion

  • Author

    Fornari, R. ; Jimenez, J. ; Avella, M.

  • Author_Institution
    Inst. for Crystal Growth, Berlin
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    649
  • Lastpage
    652
  • Abstract
    As-cut InP wafers with residual carrier concentration <5times1015cm-3, submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 107 Omegacm and mobility in the range 3000-4000 cm2 /Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SI LEC indium phosphide
  • Keywords
    III-V semiconductors; carrier density; carrier mobility; diffusion; electrical conductivity; electrical resistivity; indium compounds; iron; photoconductivity; photoluminescence; 107 ohmcm; Fe-diffusion; Fe-doped InP; InP:Fe; SI LEC indium phosphide; carrier mobility; electrical resistivity; photoconductivity; photoluminescence; residual carrier concentration; semiinsulating InP wafers; Annealing; Circuits; Conductivity; Crystalline materials; Indium phosphide; Integrated optoelectronics; Iron; Photoconductivity; Photoluminescence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517579
  • Filename
    1517579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2176125