Title :
On the optimum width of GaAs MESFETs for low noise amplifiers
Author_Institution :
TriQuint Semicond. Inc., Hillsboro, OR, USA
Abstract :
A derivation of the optimum device width for minimizing noise figure at a specified bias current is presented for a cascode LNA circuit topology in GaAs MESFET technology. This configuration achieves excellent third-order intercept and input return loss by employing source and series gate inductance. The resulting noise figure can be chosen close to F/sub min/, or traded for acceptable noise figure and/or input IP3 at reduced current consumption. Computer simulations confirm the predicted results.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF amplifiers; UHF field effect transistors; gallium arsenide; semiconductor device noise; GaAs; GaAs MESFETs; cascode LNA circuit topology; input return loss; low noise amplifiers; noise figure; optimum width; series gate inductance; specified bias current; third-order intercept; Circuit noise; FETs; Gallium arsenide; Impedance matching; Inductors; Low-noise amplifiers; MESFETs; Noise figure; Semiconductor device noise; Transconductance;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682066
