Title :
High resistivity in GaInP/GaAs by high temperature Fe ion implantation
Author :
Cesca, T. ; Verna, A. ; Gasparotto, A. ; Fraboni, B. ; Impellizzeri, G. ; Priolo, F. ; Tarricone, L. ; Longo, M.
Author_Institution :
Phys. Dept., Padova Univ.
Abstract :
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
Keywords :
III-V semiconductors; annealing; electrical resistivity; gallium compounds; indium compounds; insulating thin films; ion implantation; iron; vapour phase epitaxial growth; Fe ion implantation; GaAs substrates; GaAs-GaInP:Fe; GalnP layers; annealed MOVPE growth; electrical behavior; high electrical resistivity; high temperature effects; semiinsulating layers; structural behavior; Annealing; Conductivity; Epitaxial growth; Epitaxial layers; Gallium arsenide; Ion implantation; Iron; Physics; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517580
