DocumentCode
2176218
Title
Polarization stable 1.3 /spl mu/m InP based VCSELs grown on [311]A substrates
Author
Caneau, Catherine ; Nishiyama, Nobuhiko ; Guryanov, Georgiy ; Zah, Chung-en ; Hall, Benjamin ; Bhat, Rajaram
Author_Institution
Corning Inc., Painted Post, NY
fYear
2005
fDate
8-12 May 2005
Firstpage
660
Lastpage
663
Abstract
After optimization of the growth conditions, 1.3-m AlGaInAs/InP VCSELs were grown on (311)A substrates and lasing operation was successfully demonstrated for the first time. Growth and device results are presented. Polarization stability was achieved
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; surface emitting lasers; AlGaInAs-InP; growth conditions; lasing operation; polarization stable VCSEL; Distributed feedback devices; High speed optical techniques; Indium phosphide; Optical fiber polarization; Optical polarization; Optical pumping; Stability; Temperature; Vertical cavity surface emitting lasers; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517582
Filename
1517582
Link To Document