Title :
Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS
Author :
Sherony, M.J. ; Antoniadis, Dimitri A. ; Sleight, Jeffrey W. ; Mistry, Kaizad R.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The extrapolated dc lifetime of both body-floating and body-grounded partially-depleted SOI n-MOSFETs was demonstrated to be similar when stress conditions corresponding to realistic service conditions were used. Under these stress conditions, no special SOI-related effects exist and floating-body devices can be used for accelerated lifetime measurements
Keywords :
MOSFET; life testing; silicon-on-insulator; DC lifetime extrapolation; accelerated measurement; body-floating device; body-grounded device; partially-depleted SOI n-MOSFET; substrate current; Aging; Current measurement; Diodes; Electrical resistance measurement; Extrapolation; Hot carriers; MOSFETs; Monitoring; Silicon; Substrates;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634991
