DocumentCode
2176288
Title
Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers
Author
Susaki, Wataru ; Ukawa, Soichiro
fYear
2005
fDate
8-12 May 2005
Firstpage
666
Lastpage
669
Abstract
Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; internal stresses; quantum well lasers; InGaAsP; barrier-waveguide layers; compressively strained InGaAs quantum well lasers; indium content; spontaneous recombination lifetime; Gallium arsenide; Indium gallium arsenide; Laser transitions; Photonic band gap; Pulse measurements; Quantum well lasers; Radiative recombination; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517584
Filename
1517584
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