Title :
Wafer fused long-wavelength VCSELs with InP-based active cavities
Author_Institution :
BeamExpress S.A., Lausanne
Abstract :
Wafer fused VCSELs with InAlGaAs QWs and tunnel junction injection produce single mode output of 2 mW at 70degC and 1.65 mW at 85degC in 1310 nm and 1550 nm wavebands respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor quantum wells; surface emitting lasers; 1.65 mW; 1310 nm; 1550 nm; 2 mW; 70 C; 85 C; InAlGaAs; InAlGaAs QW; InP; InP-based active cavity; tunnel junction injection; wafer fused long-wavelength VCSEL; Distributed Bragg reflectors; Fabrication; Large-scale systems; Optical fiber communication; Optical fibers; Optical materials; Power generation; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517585
