Title :
Thermoelectric property measurement for a Peltier current lead
Author :
Hasegawa, Y. ; Oike, T. ; Okumura, H. ; Sato, K. ; Nakamura, K. ; Yamaguchi, T. ; Iiyoshi, A. ; Yamaguchi, S. ; Asano, K. ; Eura, T.
Author_Institution :
Graduate Sch. of Sci. & Eng., Saitama Univ., Japan
Abstract :
The Peltier current lead (PCL) has been studied since it was proposed as one of the thermoelectric applications. Due to the Peltier effect, it is expected that the PCL reduces the heat leak from the room temperature side to the low temperature side of a cryogenic system. Thermoelectric materials are installed into the copper (or aluminum) leads at the room temperature side and the copper leads are connected to the superconducting magnet. The present performance of the thermoelectric material can achieve a high current with a relatively small Peltier element. We measure the temperature dependence of the Seebeck coefficient and resistivity with BiTe thermoelectric materials. Optimum current is determined when PCLs apply to a super-conducting system with the simplest model. The heat leak reduction at the optimum current operation is estimated with several thermoelectric elements, and it is expected that the heat leak reduces by about 25%
Keywords :
Peltier effect; Seebeck effect; aluminium; bismuth compounds; copper; electrical resistivity; heat losses; low-temperature techniques; semiconductor materials; superconducting magnets; 20 C; BiTe thermoelectric materials; BiTe-Al; BiTe-Cu; PCL; Peltier current lead; Seebeck coefficient; aluminum; copper; cryogenic system; heat leak; heat leak reduction; high current; resistivity; room temperature; small Peltier element; superconducting magnet; temperature dependence; thermoelectric applications; thermoelectric material; thermoelectric property; Aluminum; Copper; Cryogenics; Current measurement; Magnetic materials; Superconducting magnets; Superconducting materials; Temperature dependence; Temperature measurement; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979942