Title :
An integrated noise source for a 2.0 μm BiCMOS process
Author :
Robinson, Shane R. ; Wright, Jeffery C. ; Holman, W. Timothy
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
An Integrated Noise Source (INS) has been designed and fabricated in the MOSIS/Orbit 2.0 μm n-well BiCMOS process. The INS amplifies the thermal noise generated by large polysilicon resistors to produce random analog noise. A random digital bit stream is produced by feeding the analog noise to a comparator circuit. The INS has a die area of 1.1 mm2, operates with a power supply voltage of 3.0 V, and dissipates 18 mW. The circuit has an analog noise output level of 300 mVpp, an analog bandwidth of 330 kHz, and a digital bandwidth of 100 kHz. This version of the INS is easy to trim and utilizes a new feedback topology to improve resistor matching and eliminate the need for an active virtual ground
Keywords :
BiCMOS analogue integrated circuits; circuit feedback; noise generators; random noise; thermal noise; 100 kHz; 2 micron; 2.0 μm BiCMOS process; 3 V; 300 mV; 330 kHz; Si; comparator circuit; feedback topology; integrated noise source; n-well BiCMOS process; polysilicon resistors; random analog noise; random digital bit stream; resistor matching; thermal noise amplification; Bandwidth; BiCMOS integrated circuits; Circuit noise; Feedback; Noise generators; Noise level; Power supplies; Resistors; Thermal resistance; Voltage;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.666032
