• DocumentCode
    2176835
  • Title

    High-sensitivity measurement of particles on SOI wafers

  • Author

    Naruoka, H. ; Yoshida, Y. ; Iwamatsu, T. ; Yamaguchi, Y. ; Ipposhi, T. ; Yamamoto, H.

  • Author_Institution
    ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    182
  • Lastpage
    183
  • Abstract
    In this report, it is found that particles on SOI wafers can be measured with high-sensitivity by inspection equipment with cell-to-cell image comparison. COPs were directly and non-destructively observed on SOI wafers for the first time by means of this measurement
  • Keywords
    inspection; silicon-on-insulator; surface contamination; COP; SOI wafer; Si; image comparison; inspection; nondestructive high-sensitivity measurement; particle contamination; Annealing; Counting circuits; Impurities; Inspection; Laser modes; Particle measurements; Pollution measurement; Time measurement; Ultra large scale integration; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634993
  • Filename
    634993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2176835