DocumentCode
2176940
Title
A sub 1-V SOI CMOS low noise amplifier for L-band applications
Author
Komurasaki, H. ; Sato, H. ; Sasaki, N. ; Ueda, K. ; Maeda, S. ; Yamaguchi, Y. ; Miki, T.
Author_Institution
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1998
fDate
11-8 June 1998
Firstpage
153
Lastpage
156
Abstract
This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm are obtained at 1.0 V and 1.9 GHz.
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; silicon-on-insulator; 0.35 micron; 1 V; 1.9 GHz; 3.6 dB; 7 dB; L-band applications; SOI CMOS LNA; Si; UHF IC; active-body control; low noise amplifier; Batteries; CMOS process; CMOS technology; Electrodes; L-band; Low-noise amplifiers; MOSFET circuits; Parasitic capacitance; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location
Baltimore, MD, USA
ISSN
1097-2633
Print_ISBN
0-7803-4439-1
Type
conf
DOI
10.1109/RFIC.1998.682069
Filename
682069
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