Title :
Silicon-on-sapphire MOSFET distributed amplifier with coplanar waveguide matching
Author :
Chen, P.F. ; Johnson, R.A. ; Wetzel, M. ; de la Houssaye, P.R. ; Garcia, G.A. ; Asbeck, P.M. ; Lagnado, I.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
Analog applications of silicon RF MOSFET circuits have received increased attention as potentially lower cost and higher integration alternatives to III-V technology. In this work, a thin-film silicon-on-sapphire (SOS) n-MOSEET based distributed amplifier is demonstrated. Impedance matching was achieved by a coplanar waveguide (CPW) on sapphire. The distributed amplifier has a bandwidth of 10 GHz and 5 dB gain. The amplifier´s bandwidth is the broadest ever reported for a Si MOSFET technology.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; coplanar waveguides; distributed amplifiers; impedance matching; sapphire; silicon-on-insulator; thin film transistors; wideband amplifiers; 10 GHz; 5 dB; CPW matching; SOS MOSFET distributed amplifier; Si CMOS technology; Si-Al/sub 2/O/sub 3/; TFT; coplanar waveguide matching; impedance matching; thin-film MOSFETs; Bandwidth; Coplanar waveguides; Costs; Distributed amplifiers; III-V semiconductor materials; MOSFET circuits; Radio frequency; Semiconductor thin films; Silicon; Thin film circuits;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682071
