Title :
Optimal extrinsic base fabrication for high performance SiGe HBTs for RF communication applications
Author :
Tang, Ron ; Ford, Jenny ; Pryor, Bob ; Anandakugan, S. ; Welch, Pam ; Ginn, Kathy ; Burt, Curtis ; Yeung, Bruce ; Babcock, Jeff
Author_Institution :
Commun. Products Lab., Motorola Inc., Mesa, AZ, USA
Abstract :
SiGe HBTs with low 1/f noise, low base resistance (for low noise figure and high fmax) and high intrinsic gain and breakdown voltage provide design leverage for RF communication applications. This work describes an optimal extrinsic base fabrication for SiGe HBTs, achieving fmax increased 2 times, RB reduced 50%, noise figure at 900 MHz reduced about 0.5 dB, 1/f noise reduced 10 times, and current gain increased 2 times. Breakdown voltage VCEO is larger than 8.0 V, sufficient for 3 V operations. Those results have been achieved at no additional mask or process steps to the conventional base-line process
Keywords :
1/f noise; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor device noise; semiconductor materials; 3 V; 900 MHz; RF communication applications; SiGe; high breakdown voltage; high intrinsic gain; high performance SiGe HBTs; low 1/f noise; low base resistance; optimal extrinsic base fabrication; Boron; Breakdown voltage; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606661
