Title :
GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
Author :
Jae-Woo Park ; Mohammadi, S. ; Pavlidis, D. ; Dua, C. ; Guyaux, J.L. ; Garcia, J.-C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Monolithic broadband transimpedance amplifiers were developed using GaInP/GaAs single HBTs. The HBTs showed a cut off frequency (f/sub T/) of 60 GHz and maximum oscillation frequency (f/sub max/) of 100 GHz. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dB/spl Omega/. The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.
Keywords :
HF amplifiers; III-V semiconductors; bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 100 GHz; 19 GHz; 60 GHz; GaInP-GaAs; GaInP/GaAs HBT broadband monolithic transimpedance amplifier; cascode design; cut off frequency; gain; high frequency characteristics; large signal characteristics; maximum oscillation frequency; small signal characteristics; Broadband amplifiers; Chemical technology; Degradation; Etching; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682075
