A diplexer by various embedding method

In this paper, two kinds of processes in organic substrate are adopted for the evaluation of diplexer. First, the heterogeneous organic material system with FR-4 for low-k and BT for high-k is applied for GSM/DCS dualband diplexer and as a result the size decreases by 65% in the comparison with that of homogeneous material system within maintaining the performance of diplexer. This method of using various dielectric materials is more compatible in organic substrate than in ceramic system because the matching of shrinkage in sintering process is not needed in organic multilayer system. Second, the chip insertion method is verified in this research. The passive components like chip inductor and chip capacitor for diplexer are inserted in the organic substrate and the electrical performance and the reliability against thermal attack are examined. As a result, the evaluated diplexer shows almost same electrical performance with that of embedded one and good reliability against thermal attack. Therefore, the method verified in this paper can be applied for high-valued chip components integration in system in package with good reliability.