Title :
Integrated 1.55 /spl mu/m receivers using GaAs MMICs and thin film InP detectors
Author :
Chun, C. ; Vendier, O. ; Moon, E. ; Laskar, J. ; Ki, H.C. ; Jokerst, N.M. ; Brooke, M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A GaAs-based amplifier has been designed and integrated with a large area, high efficiency, thin film InP-based metal-semiconductor-metal photodetector. Thin film integration is a hybrid integration scheme that minimizes the parasitics between the InP detector and the GaAs circuit to the order of integrated circuits. The GaAs integrated circuits are fabricated using a commercial TriQuint Semiconductor foundry process, demonstrating the use of standard GaAs-based foundry circuits for long wavelength, highly integrated, high speed, low cost photoreceivers. Utilizing thin film integration to minimize interconnect parasitics, a 1.55 /spl mu/m wavelength receiver has been demonstrated at 1 GB/s, and initial results for a 10 GB/s receiver under fabrication are presented.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor thin films; 1 GB/s; 1.55 micron; 10 GB/s; GaAs; GaAs MMIC amplifier; InP; InP metal-semiconductor-metal photodetector; OEIC; TriQuint Semiconductor foundry process; fabrication; hybrid integration; integrated circuit; interconnect parasitics; photoreceiver; thin film integration; Detectors; Foundries; Gallium arsenide; Hybrid integrated circuits; Indium phosphide; MMICs; Photodetectors; Semiconductor thin films; Thin film circuits; Transistors;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682077
