DocumentCode :
2177161
Title :
Statistical design techniques for yield enhancement of low voltage CMOS VLSI
Author :
Tarim, Tuna B. ; Kuntman, H. Hakan ; Ismai, Mohammed
Author_Institution :
Dept. of Electron. Eng., Istanbul Tech. Univ., Turkey
Volume :
2
fYear :
1998
fDate :
31 May-3 Jun 1998
Firstpage :
331
Abstract :
Since random device/process variations do not scale down with feature size or supply voltage, statistical design of low voltage circuits is essential in order to keep functional yields of low voltage circuits at levels that are competitive and cost effective. This is particularly true for low voltage analog ICs. This paper presents a robust design of a low voltage square-law CMOS composite cell, using statistical VLSI design tools. The Response Surface Methodology and Design of Experiment techniques were used as statistical tools. This paper shows that statistical techniques will result in area/layout optimization which will enhance functional yield of low voltage analog ICs
Keywords :
CMOS analogue integrated circuits; VLSI; design of experiments; integrated circuit design; integrated circuit yield; statistical analysis; VLSI; design of experiment; layout optimization; low voltage analog IC; response surface methodology; square-law CMOS composite cell; statistical design; yield; CMOS process; Circuits; Cost function; Design methodology; Electronic mail; Equations; Low voltage; Robustness; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
Type :
conf
DOI :
10.1109/ISCAS.1998.706932
Filename :
706932
Link To Document :
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