A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Author

Nakayama, M. ; Horiguchi, K. ; Yamamoto, K. ; Yoshii, Y. ; Sugiyama, S. ; Suematsu, N. ; Takagi, T.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

fYear

1998

fDate

11-8 June 1998

Firstpage

205

Lastpage

208

Abstract

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end for terminals.

Keywords

III-V semiconductors; UHF integrated circuits; UHF mixers; UHF power amplifiers; cordless telephone systems; field effect MMIC; gallium arsenide; personal communication networks; 1.9 GHz; FET gate bias voltage; GaAs; MMIC; T/R switch; cascode FET mixer; low noise amplifier; low-distortion cascode FET mixer; negative voltage generator; personal handy-phone system terminals; power amplifier; single-chip RF front-end; FET integrated circuits; Gallium arsenide; High power amplifiers; Integrated circuit noise; Low-noise amplifiers; MMICs; Noise generators; Radio frequency; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682081

Filename

682081