DocumentCode :
2177765
Title :
4xVDD ASK demodulator using standard 3.3 V CMOS device for implantable biomedical micro-stimulator
Author :
Lee, Tzung-Je ; Ou, Jin-Jun
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Cheng Shiu Univ., Kaohsiung, Taiwan
fYear :
2011
fDate :
9-11 Sept. 2011
Firstpage :
3470
Lastpage :
3473
Abstract :
This paper proposes a 4xVDD ASK demodulator using standard 3.3 V device in 0.35 μm CMOS process for the implantable biomedical micro-stimulator. Traditional implantable biomedical ASK demodulator receives the ASK modulated signal with the maximum voltage of 6 V such that it needs a step-down circuit in the system. On the other hand, in order to drive the high-impedance nerve and micro-electrode, a DC-DC converter and the HV process are required to boost the voltage to be larger than 10 V. By using the rectifier with cascoded diode-connected NMOS transistors, the proposed 4xVDD ASK demodulator can receive the ASK modulated signal with the maximum voltage of 14 V. Thus, it discards the step-down circuit, the boost circuit and HV process in the system. The maximum data rate is simulated to be 1.25 Mbps with the carrier frequency of 12.5 MHz. The core area is 109.515 × 56.925 μm2.
Keywords :
CMOS integrated circuits; DC-DC power convertors; demodulators; prosthetics; 4xVDD ASK demodulator; DC-DC converter; HV process; cascoded diode-connected NMOS transistors; implantable biomedical ASK demodulator; implantable biomedical micro-stimulator; microelectrode; rectifier; size 0.35 mum; standard CMOS device; voltage 3.3 V; Amplitude shift keying; CMOS process; Coils; Demodulation; Logic gates; System-on-a-chip; Transistors; ASK demodulator; biomedical; micro-stimulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Ningbo
Print_ISBN :
978-1-4577-0320-1
Type :
conf
DOI :
10.1109/ICECC.2011.6066630
Filename :
6066630
Link To Document :
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