Title :
Ultra-high speed HBT sine ROM for direct digital synthesis application
Author :
Kwok, Chung-Yin ; Sheng, Neng-Haung ; Asbeck, Peter ; Kent, Gary ; Chen, Steve
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
This paper presents the design and development of a read-only memory (ROM) with 300 ps access time implemented in AlGaAs/GaAs HBT technology. Both a generic 4 K ROM and a compact DDS ROM architecture that minimizes storage requirement are adopted for the look-up table design. Power dissipation for both circuits has been minimized by using of capacitively-coupled active pull-down circuitry
Keywords :
III-V semiconductors; VLSI; aluminium compounds; bipolar integrated circuits; frequency synthesizers; gallium arsenide; heterojunction bipolar transistors; integrated memory circuits; memory architecture; read-only storage; 300 ps; 4 K ROM; 4 kbit; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; capacitively-coupled active pull-down circuitry; compact DDS ROM; direct digital synthesis; look-up table design; memory architecture; power dissipation; ultra-high speed HBT sine ROM; Aerospace electronics; Circuit synthesis; Circuit testing; Digital-analog conversion; Frequency synthesizers; Heterojunction bipolar transistors; Power dissipation; Read only memory; Switches; Table lookup;
Conference_Titel :
Aerospace and Electronics Conference, 1994. NAECON 1994., Proceedings of the IEEE 1994 National
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-1893-5
DOI :
10.1109/NAECON.1994.332974
