A multi-band low-noise amplifier with MOS varactors for wireless application

Author

Li, Kang ; You, Bin ; Wen, Jincai ; Sun, Lingling

Author_Institution

Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

3494

Lastpage

3497

Abstract

This paper presents the design and simulation results of a multi-band CMOS low-noise amplifier (LNA) from 1.9GHz to 2.4GHz. Input and output impedance matching networks are achieved with extra variable capacitor controlled by the voltage. The variable capacitors used in the circuit design can make the LNA operate at some key frequency bands between 1.9GHz and 2.4GHz. The LNA is designed using IBM 90nm RF CMOS process and employs a supply voltage of 1.5V and dissipates a DC power of 15mW. The complete circuit of LNA achieves good input and output matching with S11 lower than -15dB and S22 lower than -10dB between 1.9-2.4GHz. The gain is above 10dB. And the noise figure is lower than 2dB.

Keywords

CMOS integrated circuits; UHF amplifiers; impedance matching; integrated circuit design; low noise amplifiers; varactors; IBM RF CMOS process; MOS varactors; circuit design; extra variable capacitor; frequency 1.9 GHz to 2.4 GHz; impedance matching networks; multiband CMOS low-noise amplifier; noise figure; power 15 mW; size 90 nm; voltage 1.5 V; wireless application; CMOS integrated circuits; CMOS technology; Capacitors; Impedance matching; Logic gates; Low-noise amplifiers; Simulation; CMOS; LNA; multi-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Ningbo

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6066636

Filename

6066636