Title :
A highly integrated multi-functional chip set for low cost Ka-band transceiver
Author :
Ingram, D.L. ; Sjogren, L. ; Kraus, J. ; Nishimoto, M. ; Siddiqui, M. ; Sing, S. ; Cha, K. ; Huang, M. ; Lai, R.
Author_Institution :
TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA
Abstract :
This paper presents the development of a highly integrated multi-functional chip set for low-cost Ka-band transceiver. The transmitter portion consists of a 17.5-to-35 GHz doubler macrocell which delivers >20 dBm of output power, a Ka-band SPDT polarization switch macrocell with >45 dB of isolation and a >10-W high power module. The receiver portion consists of a Ka-band doubler macrocell, an InGaAs/lnAlAs/InP HEMT Ka-band balanced LNA with 1.9 dB noise figure and 19 dB gain and a Ka-band image rejection mixer with >32 dB image rejection and 5.5 dB conversion loss. The high power module consists of two power modules; each can deliver 6-W with 24% PAE and an associated power gain of 21.5 dB. The power module consists of a driver amplifier and two power amplifier chips. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-/spl mu/m InGaAs/AlGaAs/GaAs HEMT technology. The total GaAs real estate required for implementation of a typical pulsed-FM transceiver is <150 mm/sup 2/. This highly integrated chip set will also reduce the assembly cost substantially.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; driver circuits; field effect MIMIC; frequency multipliers; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave frequency convertors; transceivers; 0.15 micron; 1.9 dB; 19 dB; 21.5 dB; 24 percent; 35 GHz; 5.5 dB; 6 W; HEMT; III-V semiconductors; InGaAs-AlGaAs-GaAs; InGaAs-InAlAs-InP; Ka-band; MMIC amplifiers; PAE; SPDT polarization switch macrocell; balanced LNA; driver amplifier; frequency doubler macrocell; high power module; image rejection mixer; multi-functional chip set; power gain; pulsed-FM transceiver; Costs; Gain; HEMTs; Indium gallium arsenide; Macrocell networks; Multichip modules; Power amplifiers; Pulse amplifiers; Switches; Transceivers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682086
