DocumentCode :
2178426
Title :
High level model of SPAD based pixel
Author :
Kazma, Rabih ; Rossetto, Olivier ; Sicard, Gilles
Author_Institution :
Univ. Grenoble Alpes, LPSC, CNRS/IN2P3, F-38026, Grenoble
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
125
Lastpage :
128
Abstract :
In this paper, a high level model of pixel containing a single photon avalanche photodiode (SPAD) followed by its readout circuit based on an analog counter is presented. This model takes into account the natural sources of photon (light sources) and dedicated noise. The photon distribution follows Poisson law process and the noise effect is modeled by a pulse sources. Figures of merit characterize the performance of SPAD, Photon Detection Probability (PDP), Dark Count Rate (DCR), Afterpulsing and Dead Time (DT) are taken into account in our model. The goal is to have a high level model of SPAD to optimize the design.
Keywords :
CMOS integrated circuits; Integrated circuit modeling; Light sources; Mathematical model; Noise; Photonics; Radiation detectors; CMOS SPAD; Dark Count; MATLAB Model; Poisson law process; analog counter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location :
Glasgow, United Kingdom
Type :
conf
DOI :
10.1109/PRIME.2015.7251350
Filename :
7251350
Link To Document :
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