Title :
Band alignment of Ta2O5 on sulphur passivated Germanium by X-ray photoelectron spectroscopy
Author :
Althobaiti, M.G. ; Stoner, J. ; Dhanak, V.R. ; Potter, R.J. ; Mitrovic, I.Z.
Author_Institution :
Department of Physics and Stephenson Institute of Renewable Energy, University of Liverpool, Liverpool L69 7ZF, UK
fDate :
June 29 2015-July 2 2015
Abstract :
In this work Ta2O5 films were deposited on germanium, by atomic layer deposition (ALD) at 250°C with and without sulphur passivation. X-ray photoelectron spectroscopy (XPS) was carried out to investigate the band line-up of Ta2O5 films with respect to germanium. The results show that the valance band offsets of Ta2O5 with respect to sulphur-passivated and unpassivated Germanium are 2.67 eV and 2.84 respectively. The band gap value of 20 nm thick Ta2O5 films was determined to be 4.44 eV from the electron energy loss spectrum of O1s core level.
Keywords :
Films; Germanium; Passivation; Photonic band gap; Substrates; Sulfur; Three-dimensional displays; MOS; Sulphur passivation; Ta2O5; band alignment;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location :
Glasgow, United Kingdom
DOI :
10.1109/PRIME.2015.7251359
