Title :
Hot carrier injection effect on threshold voltage of NMOSFETs
Author :
Lahbib, Insaf ; Doukkali, Aziz ; Martin, Patrick ; Imbert, Guy ; Raoulx, Denis
Author_Institution :
Normandie Université ENSICAEN/ CRISMAT/UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen cedex 04, France
fDate :
June 29 2015-July 2 2015
Abstract :
In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs´ Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method.
Keywords :
Aging; Degradation; Hot carriers; Reliability; Stress; Threshold voltage; Transistors; aging time; hot carrier degradation; reliability simulation; threshold voltage extraction; threshold voltage shift;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location :
Glasgow, United Kingdom
DOI :
10.1109/PRIME.2015.7251360
