A lumped, large-signal dynamic model of the mosfet for RF circuit simulation

We present a lumped, large-signal dynamic model of the MOS transistor that is derived from a partial differential equation model of the transistor. The new model is a ladder network in which each series arm is a nonlinear conductance and each shunt arm a nonlinear charge "store." The network variables are localized surface potentials, surface charge densities, and currents. We test the model against the PDE model in RF circuit simulation and the two sets of results agree well even for a small number of sections (4) of the ladder.