A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies

Author

Kordalski, Wieslaw J. ; Stefanski, Tomasz

Author_Institution

Fac. of Electron., Telecommun. & Informatics, Tech. Univ. Gdansk, Poland

fYear

2002

fDate

2002

Firstpage

316

Lastpage

319

Abstract

An original, fully analytical non-quasi-static (NQS) small-signal model of the MOS transistor is proposed for analysis and simulation of radio and microwave frequency circuits. We report results of frequency-domain analysis, the main features and experimental verification of the novel NQS four-terminal model derived in the time-domain (Kordalski, Int. Conf. on Signals and Electron. Sys., 2000). The carrier velocity saturation effect is taken into account in this model. The model is computationally efficient, physically consistent and can be applied to an arbitrary configuration of device operation.

Keywords

MMIC; MOSFET; circuit simulation; frequency-domain analysis; radiofrequency integrated circuits; semiconductor device models; time-domain analysis; NQS four-terminal model; arbitrary device operation configuration; carrier velocity saturation effect; circuit analysis; circuit simulation; computationally efficient model; four-terminal MOSFET; frequency domain analysis; microwave circuits; nonquasi-static small-signal model; physically consistent model; radio frequency circuits; time-domain model; Analytical models; Circuit simulation; Computational modeling; Electrons; Frequency domain analysis; MOSFET circuits; Microwave circuits; Microwave frequencies; Physics computing; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on

Print_ISBN

5-7422-0260-1

Type

conf

DOI

10.1109/OCCSC.2002.1029105

Filename

1029105