Title :
Low-loss high power microwave switching using novel nitride based MOS heterostructure field-effect transistors
Author :
Simin, G. ; Koudymov, A. ; Hu, X. ; Zhang, J. ; Ali, M. ; Khan, M.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
A microwave switch based on a novel nitride based metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) is proposed and demonstrated. Due to record high saturation current and breakdown voltage, negligible gate leakage current and low gate capacitance, the proposed switch allows for less than 0.3 dB insertion loss and more than 35 dB isolation. The unique feature of the MOSHFET based switch is the maximum switching power, in excess of 80 W for a 1 mm wide active element.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; dielectric thin films; gallium compounds; leakage currents; losses; microwave field effect transistors; microwave switches; semiconductor device breakdown; semiconductor heterojunctions; wide band gap semiconductors; 0.3 dB; 1 mm; 80 W; AlGaN-GaN; AlGaN/GaN MOSHFET; MOSHFET based switch; active element; breakdown voltage; gate capacitance; gate leakage current; low-loss high power microwave switching; maximum switching power; microwave switch; nitride based MOS heterostructure field-effect transistors; saturation current; switch insertion loss; switch isolation; Capacitance; Frequency; Gallium nitride; HEMTs; Insertion loss; Leakage current; MODFETs; MOSHFETs; Microwave devices; Power semiconductor switches;
Conference_Titel :
Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on
Print_ISBN :
5-7422-0260-1
DOI :
10.1109/OCCSC.2002.1029123
