DocumentCode
2179685
Title
Static-induction transistor for very-high-speed ICs
Author
Konoplev, Boris G. ; Ryndin, Eugeny A.
Author_Institution
Taganrog State Univ. of Radio-Eng., Russia
fYear
2002
fDate
2002
Firstpage
404
Lastpage
407
Abstract
The structure and model of a static-induction transistor (SIT) with Schottky barrier for very-high-speed ICs have been developed. Simulation analysis results of IC logic elements based on complementary SITs is provided. The prospects of VLSI realization based on complementary SITs is discussed.
Keywords
Schottky barriers; circuit simulation; integrated circuit design; integrated circuit modelling; logic circuits; logic design; semiconductor device models; static induction transistors; very high speed integrated circuits; IC logic element simulation analysis; Schottky barrier; VLSI realization; VLSI very-high-speed logic elements; complementary SIT; high frequency SIT structure/model; high frequency static-induction transistors; Ballistic transport; Doping; Frequency; Logic; Schottky barriers; Semiconductor process modeling; Temperature dependence; Tunneling; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on
Print_ISBN
5-7422-0260-1
Type
conf
DOI
10.1109/OCCSC.2002.1029127
Filename
1029127
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