Title :
A wide-band small-signal model from 2 to 85 GHz
Author :
Chen, Shen-Whan ; Wang, Shuming T. ; Lin, Yung-Chih
Author_Institution :
Dept. of Commun. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
In this paper, a new extraction method is developed for creating a very wide band, from 2 to 85 GHZ, small-signal model for interdigitated, low noise, pseudomorphic high electron mobility transistor (pHEMT). By applying the scalability nature of transistor, a physically related small-signal model is obtained through curve-fitting optimization. This new extraction method also eliminates the need of a de-embedding procedure.
Keywords :
UHF field effect transistors; curve fitting; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; optimisation; curve-fitting optimization; deembedding procedure; extraction method; frequency 2 GHz to 85 GHz; interdigitated low noise pHEMT; interdigitated low noise pseudomorphic high electron mobility transistor; transistor scalability nature; wide-band small-signal model; Integrated circuit modeling; Logic gates; Microwave FETs; Microwave circuits; Scattering parameters; Parameter Extraction; Scalability; Small-Signal Model; Wide-Band; pHEMT;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Zhejiang
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6066704
