DocumentCode :
2180173
Title :
Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology
Author :
Cheung, W.M. ; Cheng, C.F. ; Poon, M.C. ; Kok, C.W. ; Chan, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fYear :
2002
fDate :
2002
Firstpage :
27
Lastpage :
30
Abstract :
Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550°C to 500°C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; grain growth; liquid crystal displays; semiconductor growth; semiconductor thin films; silicon; thin film transistors; 500 C; 550 C; AMLCD; MILC; MILC grain quality; MILC growth rate; MILC polysilicon layer quality; Si; TFT; a-Si deposition temperature; active matrix liquid crystal display technology; amorphous Si quality; amorphous silicon deposition temperature optimization; low-temperature TFT performance; low-temperature thin-film transistor applications; metal-induced lateral crystallization technology; polysilicon thin-film formation; Amorphous silicon; Annealing; Crystallization; Microwave integrated circuits; Nickel; Semiconductor thin films; Sputtering; Substrates; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN :
0-7803-7429-0
Type :
conf
DOI :
10.1109/HKEDM.2002.1029149
Filename :
1029149
Link To Document :
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