Numerical study of one-fold coordinated oxygen atom in silicon gate oxide

Author

Gritsenko, V.A. ; Shaposhnikov, A.V. ; Novikov, Yu.N. ; Baraban, A.P. ; Wong, Hei ; Zhidomirov, G.M. ; Roger, M.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2002

fDate

2002

Firstpage

39

Lastpage

42

Abstract

The capturing properties of nonbridging oxygen hole centers with unpaired electrons ≡SiO· and hydrogen defects ≡SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the ≡SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.

Keywords

MIS structures; MOS integrated circuits; ab initio calculations; density functional theory; dielectric thin films; electron traps; impurity states; integrated circuit modelling; oxidation; radiation hardening (electronics); silicon compounds; DFM; MOS devices; O; Si gate oxide; SiO; SiO₂-Si; SiOH; ab initio density-functional method; electron traps; gate dielectric thickness; hydrogen SiOH defect; metal-oxide-semiconductor gate oxide; nonbridging oxygen hole center capturing properties; numerical study; one-fold coordinated oxygen atom; oxide water trap; radiation hardness; silicon oxide; unpaired electron SiO defect; wet oxidation; Charge carrier processes; Dielectric devices; Dielectric substrates; Electron traps; Hydrogen; Luminescence; Oxidation; Oxygen; Physics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong

Print_ISBN

0-7803-7429-0

Type

conf

DOI

10.1109/HKEDM.2002.1029152

Filename

1029152