Electrical characteristics of novel hafnium oxide film

Author

Ng, K.L. ; Zhan, N. ; Poon, M.C. ; Kok, C.W. ; Chan, M. ; Wong, H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2002

fDate

2002

Firstpage

51

Lastpage

54

Abstract

Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.

Keywords

MOS capacitors; MOSFET; X-ray photoelectron spectra; capacitance; dielectric thin films; electric current; hafnium compounds; integrated circuit testing; interface states; permittivity; C-V measurement; HfO₂-Si; I-V measurement; O₂; Si; XPS; capacitance-voltage measurement; current-voltage measurement; device operation; direct sputtering; electrical characteristics; hafnium oxide film; hafnium oxide-silicon substrate interface; hafnium target; interface layer charge traps; oxygen ambient; Annealing; Dielectric materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables; Hafnium oxide; Silicon; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong

Print_ISBN

0-7803-7429-0

Type

conf

DOI

10.1109/HKEDM.2002.1029155

Filename

1029155