Title :
High-current injection in Spreading-Resistance Temperature sensor on SOI
Author :
Wu, Z.H. ; Lai, P.T. ; Li, Bin ; Sin, J.K.O.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.
Keywords :
silicon-on-insulator; temperature sensors; SOI technology; Si; conductivity modulation model; doping concentration; high-current injection; silicon film; spreading-resistance temperature sensor; Conductivity; Doping; Physics; Sensor phenomena and characterization; Silicon compounds; Silicon devices; Temperature sensors; Thermal sensors; Thick film sensors; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN :
0-7803-7429-0
DOI :
10.1109/HKEDM.2002.1029159
