High-speed mixed signal and RF circuit design with compact waffle MOSFET

Author

Zhang, Xibo ; Lam, Sang ; Ko, Ping K. ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2002

fDate

2002

Firstpage

103

Lastpage

106

Abstract

A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits and an increase in the unity-gain frequency and phase margin of a high-speed two-stage operational amplifier. An active inductor designed with compact waffle MOSFET also gets higher Q value.

Keywords

CMOS integrated circuits; UHF integrated circuits; delays; field effect MMIC; high-speed integrated circuits; mixed analogue-digital integrated circuits; operational amplifiers; CMOS; Q value; active inductor; chip area; compact waffle MOSFET; gate resistance; high-speed RF circuit; high-speed mixed signal circuit; phase margin; propagation delay; source/drain diffusion capacitance; two-stage operational amplifier; unity-gain frequency; Active inductors; CMOS technology; Capacitance; Circuit synthesis; FETs; MOSFET circuits; Operational amplifiers; RF signals; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong

Print_ISBN

0-7803-7429-0

Type

conf

DOI

10.1109/HKEDM.2002.1029167

Filename

1029167